Abstract

The mechanisms of photo- and thermoluminescence processes in cation-deficient submicron AlN crystals after UV excitation are studied. The observed emission spectra represent a superposition of bands peaking at 3.0 and 2.5 eV. These spectral features are related to electronic transitions with participation of O_N impurity centers and oxygen–vacancy centers of the V_Al–O_N type. According to a quantitative analysis within the general-order kinetics formalism, charge carrier trapping centers based on nitrogen vacancies V_N have an activation energy of 0.45 eV and are responsible for the formation of a thermally activated peak at a temperature of 345 K.

中文翻译：

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紫外线辐照的氮化铝微晶中光谱分辨热致发光的特定特征

摘要

研究了阳离子不足的亚微米AlN晶体在紫外激发后的光致发光和热致发光机理。观察到的发射光谱表示在3.0和2.5 eV处出现峰的能带叠加。这些光谱特征与O _N杂质中心和V _Al –O _N型氧空位中心的参与引起的电子跃迁有关。根据一般动力学动力学形式中的定量分析，基于氮空位V _N的电荷载流子俘获中心的活化能为0.45 eV，并负责在345 K的温度下形成热活化峰。