In x Ga 1– x N ternary alloys are very promising for a variety of applications. However, high-quality growth of In x Ga 1– x N alloys, particularly in the intermediate In composition range, is very difficult. This study reports on a systematic analysis of the Raman spectra from the In x Ga 1– x N alloys grown by radio-frequency molecular beam epitaxy (RF-MBE) for the whole In compositional range, particularly in the intermediate range of In composition. The B 1 (high) mode, which is inherently Raman inactive is observed for the In x Ga 1– x N alloys grown by RF-MBE. The behaviour of Raman inactive B 1 (high) mode is studied for the evaluation of In x Ga 1– x N quality, which is found to vary with the In composition and the temperature of growth. The crystallinity of the In x Ga 1– x N alloys can be assessed using B 1 (high) mode’s relative signal intensity and full-width at half-maximum, which are well agreed with the reflection high energy electron diffraction and X-ray diffraction analyses. The optimum growth temperature for the In x Ga 1– x N alloys grown by RF-MBE in the intermediate range of In composition is also discussed.

中文翻译：

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通过 RF-MBE 生长的 InxGa1-xN 合金中拉曼 B1（高）模式的行为和结晶质量评估

In x Ga 1– x N 三元合金在各种应用中非常有前途。然而，In x Ga 1– x N 合金的高质量生长，特别是在中间 In 成分范围内，是非常困难的。本研究报告了对通过射频分子束外延 (RF-MBE) 生长的 In x Ga 1– x N 合金在整个 In 组成范围内，特别是在 In 组成的中间范围内的拉曼光谱的系统分析。对于通过 RF-MBE 生长的 In x Ga 1– x N 合金，观察到 B 1（高）模式，其固有的拉曼惰性。为了评估 In x Ga 1– x N 质量，研究了拉曼非活性 B 1（高）模式的行为，发现其随 In 成分和生长温度而变化。In x Ga 1– x N 合金的结晶度可以使用 B 1（高）模式的相对信号强度和半峰全宽来评估，这与反射高能电子衍射和 X 射线衍射非常吻合分析。还讨论了在中等 In 成分范围内通过 RF-MBE 生长的 In x Ga 1– x N 合金的最佳生长温度。