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Behaviour of Raman B1 (high) mode and evaluation of crystalline quality in the InxGa1–xN alloys grown by RF-MBE

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Abstract

InxGa1–xN ternary alloys are very promising for a variety of applications. However, high-quality growth of InxGa1–xN alloys, particularly in the intermediate In composition range, is very difficult. This study reports on a systematic analysis of the Raman spectra from the InxGa1–xN alloys grown by radio-frequency molecular beam epitaxy (RF-MBE) for the whole In compositional range, particularly in the intermediate range of In composition. The B1 (high) mode, which is inherently Raman inactive is observed for the InxGa1–xN alloys grown by RF-MBE. The behaviour of Raman inactive B1 (high) mode is studied for the evaluation of InxGa1–xN quality, which is found to vary with the In composition and the temperature of growth. The crystallinity of the InxGa1–xN alloys can be assessed using B1 (high) mode’s relative signal intensity and full-width at half-maximum, which are well agreed with the reflection high energy electron diffraction and X-ray diffraction analyses. The optimum growth temperature for the InxGa1–xN alloys grown by RF-MBE in the intermediate range of In composition is also discussed.

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References

  1. Davydov V Y, Klochikhin A A, Emtsev V V, Kurdyukov D A, Ivanov S V, Vekshin V V et al 2002 Phys. Status Solidi B 234 787

    Article  CAS  Google Scholar 

  2. Wu J, Walukiewicz W, Yu K M, Ager J W, Haller E E, Lu H et al 2002 Appl. Phys. Lett. 80 3967

    Article  CAS  Google Scholar 

  3. Bhuiyan A G, Sugita K, Kasashima K, Hashimoto A, Yamamoto A and Davydov V Y 2003 Appl. Phys. Lett. 83 4788

    Article  CAS  Google Scholar 

  4. Matsuoka T, Okamoto H, Nakao M, Harima H and Kurimoto E 2002 Appl. Phys. Lett. 81 1246

    Article  CAS  Google Scholar 

  5. Ruffenach S, Moret M, Briot O and Gil B 2010 Phys. Status Solidi A 207 9

    Article  CAS  Google Scholar 

  6. Wu J 2009 J. Appl. Phys. 106 011101

    Article  Google Scholar 

  7. Veal T D, McConville C F and Schaff W J (eds) 2010 Indium nitride and related alloys (London: CRS Press/Taylor & Francis)

  8. Wu J, Walukiewicz W, Yu K M, Shan W, Ager J W, Haller E E et al 2003 J. Appl. Phys. 94 6477

    Article  CAS  Google Scholar 

  9. Trybus E, Namkoong G, Henderson W, Burnham S, Doolittle W A, Cheung M et al 2006 J. Cryst. Growth 288 218

    Article  CAS  Google Scholar 

  10. Hasan M T, Islam M J, Hasan R, Islam M S, Yeasmin S, Bhuiyan A G et al 2010 Phys. Status Solidi C 7 1825

    Article  CAS  Google Scholar 

  11. Hossain M M, Humayun M A, Hasan M T, Bhuiyan A G, Hashimoto A and Yamamoto A 2012 IEICE Trans. Electron. E95-C 255

  12. O’Leary S K, Foutz B E, Shur M S, Bhapkar U V and Eastman L F 1998 J. Appl. Phys. 83 826

    Article  Google Scholar 

  13. Foutz B E, O’Leary S K, Shur M S and Eastman L F 1999 J. Appl. Phys. 85 7727

    Article  CAS  Google Scholar 

  14. Polyakov V M and Schwierz F 2006 Appl. Phys. Lett. 88 032101

    Article  Google Scholar 

  15. Kuzuhara M 2009 Proc. CS MANTECH Conference, Tampa, Florida, USA

  16. Kodama K and Kuzuhara M 2008 IEICE Electron. Express 5 1074

    Article  Google Scholar 

  17. Bhuiyan A G, Sugita K, Hashimoto A and Yamamoto A 2012 IEEE J. Photovolt. 2 276

    Article  Google Scholar 

  18. Fabien C A M, Maros A, Honsberg C B and Doolittle W A 2016 IEEE J. Photovolt. 6 460

    Article  Google Scholar 

  19. Williams J J, McFavilen H, Fischer A M, Ding D, Young S, Vadiee E et al 2017 IEEE J. Photovolt. 7 1646

    Article  Google Scholar 

  20. Arif M, Elhuni W, Streque J, Sundaram S, Belahsene S, El Gmili Y et al 2017 Sol. Energy Mater. Sol. Cells 159 405

    Article  CAS  Google Scholar 

  21. Yamamoto A, Sugita K, Bhuiyan A G, Hashimoto A and Narita N 2013 Mater. Renew. Sustain. Energy 2 10

    Article  Google Scholar 

  22. Iliopoulos E, Georgakilas A, Dimakis E, Adikimenakis A, Tsagaraki K, Androulidaki M et al 2006 Phys. Status Solidi A 203 102

    Article  CAS  Google Scholar 

  23. Fabien C A M, Gunning B P, Doolittle W A, Fischer A M, Wei Y O, Xie H et al 2015 J. Cryst. Growth 425 115

    Article  CAS  Google Scholar 

  24. Kazazis S A, Papadomanolaki E, Androulidaki M, Kayambaki M and Iliopoulos E 2018 J. Appl. Phys. 123 125101

    Article  Google Scholar 

  25. Bhuiyan A G, Islam M S, Hironaga D and Hashimoto A 2020 Superlattice Microst. 140 106448

    Article  CAS  Google Scholar 

  26. Dimitrakopulos G P, Baziotia C, Papadomanolaki E, Filintoglou K, Katsikini M, Arvanitidis J et al 2018 Mater. Sci. Technol. 34 1565

    Article  CAS  Google Scholar 

  27. Clinton E A, Vadiee E, Fabien C A M, Moseley M W, Gunning B P, Doolittle W A et al 2017 Solid-State Electron. 136 3

    Article  CAS  Google Scholar 

  28. Bhuiyan A G, Mihara A, Esaki T, Sugita K, Hashimoto A, Yamamoto A et al 2012 Phys. Status Solidi C 9 670

    Article  CAS  Google Scholar 

  29. Yamamoto A, Mihara A, Hironaga D, Sugita K, Bhuiyan A G, Hashimoto A et al 2013 Phys. Status Solidi C 10 437

    Article  CAS  Google Scholar 

  30. Bhuiyan A G, Islam M S and Hashimoto A 2020 AIP Adv. 10 015053

    Article  CAS  Google Scholar 

  31. Iwao K, Yamamoto A and Hashimoto A 2008 Phys. Status Solidi C 5 1771

    Article  CAS  Google Scholar 

  32. Grille H and Schnittler C 2000 Phys. Rev. B 61 9

    Article  Google Scholar 

  33. Hernandez S, Cusco R, Pastor D, Artus L, O’Donnell K P, Martin R W et al 2005 J. Appl. Phys. 98 013511

    Article  Google Scholar 

  34. Kim J G, Kamei Y, Kimura A, Hasuike N, Harima H, Kisoda K et al 2012 Phys. Status Solidi C 9 730

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology (KUET), Khulna, 9203, Bangladesh

    Ashraful G Bhuiyan & Md Sherajul Islam

  2. Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui, 910-8507, Japan

    Kenji Kuroda & Akihiro Hashimoto

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  1. Ashraful G Bhuiyan
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  2. Kenji Kuroda
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  3. Md Sherajul Islam
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  4. Akihiro Hashimoto
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Correspondence to Ashraful G Bhuiyan.

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Bhuiyan, A.G., Kuroda, K., Islam, M.S. et al. Behaviour of Raman B1 (high) mode and evaluation of crystalline quality in the InxGa1–xN alloys grown by RF-MBE. Bull Mater Sci 43, 278 (2020). https://doi.org/10.1007/s12034-020-02252-x

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  • DOI: https://doi.org/10.1007/s12034-020-02252-x

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