The concept of a cryogenic low-noise amplifier (LNA) using quantized conduction in a 1D channel is proposed and explored through simulations. A MOSFET with a 1D channel (nanowire) will exhibit the formation of plateaus in the current due to sub-band quantization at temperatures of below about 100 K and low drive bias. Using a ballistic 1D top-of-the-barrier model, we show that the current plateaus significantly enhance the transconductance, enabling low noise and high gain at low DC power dissipation—key characteristics for LNA applications such as quantum computing. The results indicate that cryogenic 1D ballistic MOSFETs may offer a significant improvement in noise performance and power dissipation (40x reduction) over traditional devices for cryogenic applications with low input power, such as quantum computing.

中文翻译：

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量化弹道纳米线通道对低噪声放大器的仿真

通过一维通道中的量化传导，提出了低温低噪声放大器（LNA）的概念，并通过仿真进行了探索。具有1D通道（纳米线）的MOSFET将在低于100 K的温度和低驱动偏置的情况下由于子带量化而在电流中形成平稳区。使用弹道一维顶级屏障模型，我们证明了当前的平稳状态大大增强了跨导，在低DC功耗下实现了低噪声和高增益，这是LNA应用（例如量子计算）的关键特性。结果表明，与用于低输入功率的低温应用（如量子计算）的传统设备相比，低温一维弹道MOSFET可能在噪声性能和功耗（降低40倍）方面提供显着改善。