Abstract

The processes associated with transformations of oxygen-related radiation-induced defects in Czochralski-grown silicon crystals irradiated with fast electrons or neutrons and subjected to heat-treatment in the temperature range of 450–700°C have been studied by means of IR absorption spectroscopy. It is found that, upon disappearance of the VO₃ and VO₄ defects, new vacancy-oxygen-related complexes, which give rise to a number of vibrational absorption bands in the wavenumber range of 980–1115 cm^–1, are formed. It is argued that these complexes are radiation-induced VO_m centers (m ≥ 5), which serve as nucleation centers of enhanced oxygen precipitation in silicon.

中文翻译：

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450–700°С温度范围内退火过程中辐照的硅晶体中含氧中心的形成

摘要

通过红外吸收光谱研究了在快速电子或中子辐照下并在450-700°C的温度下进行过热处理的切克劳斯基生长的硅晶体中与氧有关的辐射诱发缺陷的转变相关的过程。结果发现，随着VO ₃和VO ₄缺陷的消失，形成了新的空位氧相关的络合物，这些络合物产生了在980-1115 cm ^-1的波数范围内的多个振动吸收带。有人认为这些复合物是辐射诱导VO_米中心（米≥5），其作为在硅增强氧沉淀成核中心。