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Formation of Oxygen-Containing Centers in Irradiated Silicon Crystals during Annealing in the Temperature Range of 450–700°С

  • ELECTRONIC ENGINEERING MATERIALS
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Inorganic Materials: Applied Research Aims and scope

Abstract

The processes associated with transformations of oxygen-related radiation-induced defects in Czochralski-grown silicon crystals irradiated with fast electrons or neutrons and subjected to heat-treatment in the temperature range of 450–700°C have been studied by means of IR absorption spectroscopy. It is found that, upon disappearance of the VO3 and VO4 defects, new vacancy-oxygen-related complexes, which give rise to a number of vibrational absorption bands in the wavenumber range of 980–1115 cm–1, are formed. It is argued that these complexes are radiation-induced VOm centers (m ≥ 5), which serve as nucleation centers of enhanced oxygen precipitation in silicon.

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ACKNOWLEDGMENTS

This work was supported in part by the Belarusian Republican Foundation for Fundamental Research (project no. F20-111).

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Authors and Affiliations

  1. Scientific-Practical Materials Research Center, National Academy of Sciences of Belarus, 220072, Minsk, Belarus

    E. A. Talkachova, L. I. Murin & F. P. Korshunov

  2. Belarusian Medical State University, 220016, Minsk, Belarus

    I. F. Medvedeva

  3. Photon Science Institute and School of Electrical and Electronic Engineering, University of Manchester, M13 9PL, Manchester, United Kingdom

    V. P. Markevich

Authors
  1. E. A. Talkachova
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  2. L. I. Murin
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  3. I. F. Medvedeva
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  4. F. P. Korshunov
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  5. V. P. Markevich
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Correspondence to E. A. Talkachova, L. I. Murin, I. F. Medvedeva, F. P. Korshunov or V. P. Markevich.

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Translated by G. Dedkov

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Talkachova, E.A., Murin, L.I., Medvedeva, I.F. et al. Formation of Oxygen-Containing Centers in Irradiated Silicon Crystals during Annealing in the Temperature Range of 450–700°С. Inorg. Mater. Appl. Res. 11, 1078–1082 (2020). https://doi.org/10.1134/S2075113320050330

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  • DOI: https://doi.org/10.1134/S2075113320050330

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