Abstract

Ge/Si layers are formed on Si/SiO₂/Si(100) substrates and are investigated for different growth temperatures. The Si layer is grown by molecular-beam epitaxy, while the Ge layer is produced by the hot wire chemical vapor deposition. Structural studies are carried out using high-resolution transmission electron microscopy and reflection high-energy electron diffraction. Such structures are promising for the growth of high-quality light-emitting structures on them, which are compatible with silicon radiation-resistant integrated circuits. It is shown that a single-crystal Ge layer can be grown on Si/SiO₂/Si(100) via a Si buffer layer by the hot wire chemical vapor deposition, and the difficulties arising during the growth of Ge/Si layers on Si/SiO₂/Si(100) are demonstrated.

中文翻译：

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热线化学气相沉积法在Si / SiO 2 / Si（100）结构上生长Ge层

摘要

Ge / Si层形成在Si / SiO ₂ / Si（100）衬底上，并针对不同的生长温度进行了研究。Si层是通过分子束外延生长的，而Ge层是通过热线化学气相沉积生产的。使用高分辨率透射电子显微镜和反射高能电子衍射进行结构研究。这样的结构有望在其上生长与耐硅辐射的集成电路兼容的高质量发光结构。结果表明，通过热线化学气相沉积可以通过Si缓冲层在Si / SiO ₂ / Si（100）上生长单晶Ge层，以及在Si上生长Ge / Si层时遇到的困难。 / SiO ₂演示了/ Si（100）。