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Growth of a Ge Layer on a Si/SiO2/Si(100) Structure by the Hot Wire Chemical Vapor Deposition

  • XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
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Abstract

Ge/Si layers are formed on Si/SiO2/Si(100) substrates and are investigated for different growth temperatures. The Si layer is grown by molecular-beam epitaxy, while the Ge layer is produced by the hot wire chemical vapor deposition. Structural studies are carried out using high-resolution transmission electron microscopy and reflection high-energy electron diffraction. Such structures are promising for the growth of high-quality light-emitting structures on them, which are compatible with silicon radiation-resistant integrated circuits. It is shown that a single-crystal Ge layer can be grown on Si/SiO2/Si(100) via a Si buffer layer by the hot wire chemical vapor deposition, and the difficulties arising during the growth of Ge/Si layers on Si/SiO2/Si(100) are demonstrated.

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Funding

This study was supported by the Russian Science Foundation, project no. 18-72-10061.

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Authors and Affiliations

  1. Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    A. A. Sushkov, D. A. Pavlov, S. A. Denisov, V. Yu. Chalkov, R. N. Kryukov & E. A. Pitirimova

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  1. A. A. Sushkov
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  2. D. A. Pavlov
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  3. S. A. Denisov
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  4. V. Yu. Chalkov
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  5. R. N. Kryukov
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  6. E. A. Pitirimova
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Correspondence to A. A. Sushkov.

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Translated by A. Sin’kov

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Sushkov, A.A., Pavlov, D.A., Denisov, S.A. et al. Growth of a Ge Layer on a Si/SiO2/Si(100) Structure by the Hot Wire Chemical Vapor Deposition. Semiconductors 54, 1332–1335 (2020). https://doi.org/10.1134/S1063782620100309

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  • DOI: https://doi.org/10.1134/S1063782620100309

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