Abstract

A design of a tunnel junction (TJ) based on n⁺⁺-InGaAs/p⁺⁺-InGaAs/p⁺⁺-InAlGaAs layers for vertical-cavity surface-emission lasers (VCSELs) for the 1.55-μm spectral range fabricated by wafer fusion of an InAlGaAsP/InP optical cavity and wafers with AlGaAs/GaAs distributed Bragg reflectors has been suggested and tested. The presence of the oxidation-resistant InGaAs layers makes it possible to employ the molecular-beam epitaxy in all stages of the fabrication technology of VCSELs, including the overgrowth of the surface profile in the TJ layer. Owing to the Burstein–Moss effect and to the thickness minimization of the p⁺⁺-InGaAs layer, it was possible to avoid a buildup of the internal optical loss. As a result, the characteristics of the thus fabricated devices are comparable with those of VCSELs having an n⁺⁺-/p⁺⁺-InAlGaAs TJ and a similar level of the mirror losses.

中文翻译：

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基于n ++ -InGaAs / p ++ -InGaAs / p ++ -InAlGaAs层的具有隧道结的1.55-μm光谱范围的垂直腔表面发射激光器

摘要

基于n ⁺⁺ -InGaAs / p ⁺⁺ -InGaAs / p ⁺⁺ -InAlGaAs层的隧道结（TJ）设计，用于晶片制造的1.55μm光谱范围的垂直腔表面发射激光器（VCSEL）已经提出并测试了将InAlGaAsP / InP光学腔和晶片与AlGaAs / GaAs分布式布拉格反射器融合。抗氧化InGaAs层的存在使得分子束外延可以在VCSEL的制造技术的所有阶段中使用，包括TJ层中表面轮廓的过度生长。由于Burstein-Moss效应和p ⁺⁺的厚度最小化-InGaAs层，可以避免内部光学损耗的累积。结果，如此制造的器件的特性可与具有n ⁺⁺ -/ p ⁺⁺ -InAlGaAs TJ且镜面损耗水平相似的VCSEL的特性相媲美。