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A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers

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Abstract

A design of a tunnel junction (TJ) based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs layers for vertical-cavity surface-emission lasers (VCSELs) for the 1.55-μm spectral range fabricated by wafer fusion of an InAlGaAsP/InP optical cavity and wafers with AlGaAs/GaAs distributed Bragg reflectors has been suggested and tested. The presence of the oxidation-resistant InGaAs layers makes it possible to employ the molecular-beam epitaxy in all stages of the fabrication technology of VCSELs, including the overgrowth of the surface profile in the TJ layer. Owing to the Burstein–Moss effect and to the thickness minimization of the p++-InGaAs layer, it was possible to avoid a buildup of the internal optical loss. As a result, the characteristics of the thus fabricated devices are comparable with those of VCSELs having an n++-/p++-InAlGaAs TJ and a similar level of the mirror losses.

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ACKNOWLEDGMENTS

The authors are grateful to S.I. Troshkov for examining the samples under study by scanning electron microscopy.

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    S. A. Blokhin, M. A. Bobrov & N. A. Maleev

  2. Submicron Heterostructures for Microelectronics, Research & Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. A. Blokhin, A. G. Kuz’menkov, A. P. Vasil’ev & V. M. Ustinov

  3. St. Petersburg University of Information Technologies, Mechanics, and Optics (ITMO University), 197101, St. Petersburg, Russia

    S. S. Rochas, A. G. Gladyshev, A. V. Babichev, I. I. Novikov, L. Ya. Karachinsky & A. Yu. Egorov

  4. Connector Optics LLC, 194292, St. Petersburg, Russia

    A. G. Gladyshev, A. V. Babichev & L. Ya. Karachinsky

  5. St. Petersburg State Electrotechnical University “LETI”, 197376, St. Petersburg, Russia

    D. V. Denisov

  6. Yaroslav-the-Wise Novgorod State University, 173003, Veliky Novgorod, Russia

    K. O. Voropaev

  7. OKB-Planeta LLC, 173004, Veliky Novgorod, Russia

    K. O. Voropaev & A. S. Ionov

Authors
  1. S. A. Blokhin
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  2. M. A. Bobrov
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  3. N. A. Maleev
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  4. A. A. Blokhin
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  5. A. G. Kuz’menkov
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  6. A. P. Vasil’ev
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  7. S. S. Rochas
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  8. A. G. Gladyshev
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  9. A. V. Babichev
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  10. I. I. Novikov
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  11. L. Ya. Karachinsky
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  12. D. V. Denisov
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  13. K. O. Voropaev
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  14. A. S. Ionov
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  15. A. Yu. Egorov
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  16. V. M. Ustinov
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Corresponding author

Correspondence to S. A. Blokhin.

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The authors declare that they have no conflict of interest.

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Translated by M. Tagirdzhanov

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Blokhin, S.A., Bobrov, M.A., Maleev, N.A. et al. A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers. Tech. Phys. Lett. 46, 854–858 (2020). https://doi.org/10.1134/S1063785020090023

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  • DOI: https://doi.org/10.1134/S1063785020090023

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