Band gap tuning of electrodeposited Cu(In_1-x,Ga_x)Se₂ thin films through varying In³⁺ and Ga³⁺ concentrations in the electrolytic bath is demonstrated. Cyclic voltammetry was used to determine best Cu(In_1-x,Ga_x)Se₂ deposition potentials at the different bath conditions. Band gap tuning of Cu(In_1-x,Ga_x)Se₂ was achieved, through incorporation of varying In³⁺ and Ga³⁺ levels during film growth, in the range of 1 to 1.4 eV, corresponding to Ga content 0 ≤ Ga/(In + Ga) ≤ 0.64. Deposited films were characterized by EDS/SEM, XRD, and Raman spectroscopy to determine chemical composition, morphology, and crystal structure. Results show that as-deposited Cu(In_1-x,Ga_x)Se₂ thin films are of low crystallinity, with Se and Cu-Se compounds present as a secondary phase. Selenization of electrodeposited Cu(In_1-x,Ga_x)Se₂ films was performed using a rapid thermal processing system at 550 °C in an overpressure reactive atmosphere of N₂/H₂ (96%:4%) and elemental Se vapor. Selenization treatment promoted recrystallization and elimination of secondary phases, resulting in an increase in grain size while maintaining film composition. Processed films with Ga/(In + Ga) = 0.35 were processed into devices, achieving 2.6% efficiency.

通过改变电解槽中In ³⁺和Ga ^3+的浓度，对电沉积Cu（In _{1- x}，Ga _x）Se ₂薄膜的带隙调谐进行了说明。循环伏安法用于确定在不同浴条件下的最佳Cu（In _{1- x}，Ga _x）Se ₂沉积电位。通过掺入变化的In ³⁺和Ga ³⁺实现了Cu（In _{1- x}，Ga _x）Se _2的带隙调谐薄膜生长过程中的水平处于1至1.4 eV的范围内，对应于Ga含量0≤Ga /（In + Ga）≤0.64。通过EDS / SEM，XRD和拉曼光谱对沉积的膜进行表征，以确定化学组成，形态和晶体结构。结果表明，沉积态的Cu（In _{1- x}，Ga _x）Se ₂薄膜结晶度低，Se和Cu-Se化合物为第二相。在N ₂ / H ₂超压反应气氛中，使用快速热处理系统在550°C下进行电沉积的Cu（In _{1- x}，Ga _x）Se ₂膜的硒化（96％：4％）和元素硒蒸气。硒化处理促进了再结晶和消除了第二相，从而在保持膜组成的同时增加了晶粒尺寸。Ga /（In + Ga）= 0.35的已处理薄膜被加工成器件，实现了2.6％的效率。