The current work is an extension of the nonlocal elasticity theory to fractional order thermo-elasticity in semiconducting nanostructure medium with voids. The analysis is made on the reflection phenomena in context of three-phase-lag thermo-elastic model. It is observed that, four-coupled longitudinal waves and an independent shear vertical wave exist in the medium which is dispersive in nature. It is seen that longitudinal waves are damped, and shear wave is un-damped when angular frequency is less than the cut-off frequency. The voids, thermal and non-local parameter affect the dilatational waves whereas shear wave is only depending upon non-local parameter. It is found that reflection coefficients are affected by nonlocal and fractional order parameters. Reflection coefficients are calculated analytically and computed numerically for a material, silicon and discussed graphically in details. The results for local (classical) theory are obtained as a special case. The study may be useful in semiconductor nanostructure, geology and seismology in addition to semiconductor nanostructure devices.

当前的工作是将非局部弹性理论扩展到具有空隙的半导体纳米结构介质中的分数阶热弹性。针对三相滞后热弹模型的反射现象进行了分析。可以看出，在本质上是分散的介质中存在四耦合纵波和独立的剪切纵波。可以看出，当角频率小于截止频率时，纵波被阻尼，剪切波未被阻尼。空隙，热和非局部参数影响膨胀波，而剪切波仅取决于非局部参数。发现反射系数受非局部和分数阶参数的影响。反射系数是针对材料，硅的解析计算和数值计算，并以图形方式详细讨论。特殊情况下获得了局部（经典）理论的结果。除半导体纳米结构器件外，该研究还可用于半导体纳米结构，地质学和地震学。