Abstract

Theoretical studies on excitonic and optical properties of a single exciton confined in an InP/ZnS heterostructure core/shell quantum dot embedded in various dielectric environments are investigated. The energies are found with and without the inclusion of dielectric mismatch employing single band effective mass approximation using variational formulism. The solution of Poisson-Schrödinger wave equations for the attractive term between the electron and hole is carried out using a self consistent approach in the Hartree approximation. The binding energy due to an exciton and oscillator strength is found with the effect of geometrical confinement. The total absorption coefficients, the injection current density for the optical output and the corresponding threshold optical pump intensity studied in the presence of various dielectric environments are investigated in the InP/ZnS heterostructure core/shell quantum dot. The ratio of core/shell hetero-structured quantum dot radius for various values of dielectric matrices immersed is found. The results show that the obtained properties are considerably enhanced with the incorporation of dielectric environment matrices immersed in the core/shell quantum dot particularly the highest dielectric constant will bring out the better results. It is hoped that to the present study will contribute the understanding of excitonic and optical properties in the group II–VI core/shell heterostructure quantum dots for the potential applications in photovoltaic and light emitting diodes.

Graphical abstract

中文翻译：

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InP / ZnS核/壳量子点的各种介电环境矩阵对光增益系数的作用

摘要

对单个激子的激发和光学性质进行了理论研究，该激子被限制在嵌入在各种介电环境中的InP / ZnS异质结构核/壳量子点中。在使用或不使用介电不匹配的情况下，使用变分公式，通过单频带有效质量近似来找到能量。电子和空穴之间的吸引项的Poisson-Schrödinger波动方程的解是在Hartree近似中使用自洽方法进行的。发现由于激子和振子强度引起的结合能受到几何限制的影响。总吸收系数，在InP / ZnS异质结构核/壳量子点中研究了在各种介电环境下研究的光输出的注入电流密度和相应的阈值光泵浦强度。找到了浸入的各种介电矩阵的核/壳异质结构量子点半径之比。结果表明，通过将电介质环境矩阵浸入到核/壳量子点中，可以大大提高获得的性能，特别是最高的介电常数将带来更好的结果。希望本研究将有助于理解II-VI族核/壳异质结构量子点的激子和光学性质，以用于光电和发光二极管的潜在应用。

图形概要