Modulation of the adsorption chemistry of a precursor in atomic layer deposition to enhance the growth per cycle of a TiO2 thin film,Physical Chemistry Chemical Physics

当前位置： X-MOL 学术 › Phys. Chem. Chem. Phys. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Modulation of the adsorption chemistry of a precursor in atomic layer deposition to enhance the growth per cycle of a TiO2 thin film
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2020-10-01 , DOI: 10.1039/d0cp04176a
Yeonchoo Cho _{1,

2} , Sang Hyeon Kim _{2,

3,

4,

5} , Byung Seok Kim _{2,

6,

7} , Youngjin Kim _{8,

9,

10,

11} , Woojin Jeon _{2,

6,

7}

Affiliation

Atomic layer deposition (ALD) has scarcely been utilized in large-scale manufacturing and industrial processes due to its low productivity, even though it possesses several advantages for improving the device performance. The major cause of its low productivity is the slow growth rate, which is determined by the amount of chemisorbed precursor. The slow growth rate of ALD has become even more critical due to the introduction of heteroleptic-based precursors for achieving a higher thermal stability. In this study, we investigated the theoretical and experimental chemisorption characteristics of the Ti(CpMe₅)(OMe)₃ precursor during the ALD of TiO₂. By density functional theory calculations, the relationship between the steric hindrance effect and the chemistry of a chemisorbed precursor was revealed. Based on the calculation result, a way for improving the growth per cycle by 50% was proposed and demonstrated, successfully.

中文翻译：

调节原子层沉积中前驱体的吸附化学，以提高TiO2薄膜每周期的生长

原子层沉积（ALD）由于生产率低而很少用于大规模制造和工业过程，尽管它具有改善器件性能的若干优点。其生产率低下的主要原因是生长速度缓慢，这取决于化学吸附的前体的量。由于引入了基于杂合剂的前体以实现更高的热稳定性，ALD的缓慢生长速率变得更加关键。在这项研究中，我们研究了TiO ₂的ALD过程中Ti（CpMe ₅）（OMe）₃前体的理论和实验化学吸附特性。。通过密度泛函理论计算，揭示了位阻效应与化学吸附前体化学性质之间的关系。根据计算结果，提出并成功证明了将每个周期的增长率提高50％的方法。

更新日期：2020-10-20

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11