Issue 4, 2021

Modulation of the adsorption chemistry of a precursor in atomic layer deposition to enhance the growth per cycle of a TiO2 thin film

Abstract

Atomic layer deposition (ALD) has scarcely been utilized in large-scale manufacturing and industrial processes due to its low productivity, even though it possesses several advantages for improving the device performance. The major cause of its low productivity is the slow growth rate, which is determined by the amount of chemisorbed precursor. The slow growth rate of ALD has become even more critical due to the introduction of heteroleptic-based precursors for achieving a higher thermal stability. In this study, we investigated the theoretical and experimental chemisorption characteristics of the Ti(CpMe5)(OMe)3 precursor during the ALD of TiO2. By density functional theory calculations, the relationship between the steric hindrance effect and the chemistry of a chemisorbed precursor was revealed. Based on the calculation result, a way for improving the growth per cycle by 50% was proposed and demonstrated, successfully.

Graphical abstract: Modulation of the adsorption chemistry of a precursor in atomic layer deposition to enhance the growth per cycle of a TiO2 thin film

Article information

Article type
Paper
Submitted
07 Aug 2020
Accepted
30 Sep 2020
First published
01 Oct 2020

Phys. Chem. Chem. Phys., 2021,23, 2568-2574

Modulation of the adsorption chemistry of a precursor in atomic layer deposition to enhance the growth per cycle of a TiO2 thin film

Y. Cho, S. H. Kim, B. S. Kim, Y. Kim and W. Jeon, Phys. Chem. Chem. Phys., 2021, 23, 2568 DOI: 10.1039/D0CP04176A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements