Abstract Present study focuses on the structural, morphological, optical and electrical transport properties of Sn substituted In2O3 (In2-x SnxO3; 0.0 ≤ x ≤ 0.25) synthesized by solid state reaction method. X-ray diffraction patterns and selected area electron diffraction from high resolution transmission electron microscopy substantiated the pure cubic bixbyite structure with high crystallinity. Raman analysis confirmed the cubic like phonon modes in each sample and their noticeable phase was revealed by the presence of tin doping. The band gap widening of all nanocrystalline samples were well explained by Burstein-Moss model, due to the filling of the strongly dispersing conduction band by doped electrons and the decrease in oxygen vacancies were confirmed by deconvoluted emission spectra. Hall measurements showed the n-type conductivity with low electrical resistivity (1.3011 × 10−4 Ω -cm) along with high carrier concentration (7.523 × 1020 cm−3), mobility (63.85 cm2/V-s) and electron mean free path (11.183 nm) for x = 0.1, optimizing it as a suitable candidate for optoelectronic applications.

中文翻译：

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掺杂在 2O3 中的 Sn 的结构、光和电传输特性

摘要 目前的研究重点是通过固态反应法合成的Sn 取代In2O3 (In2-x SnxO3; 0.0 ≤ x ≤ 0.25) 的结构、形态、光学和电学传输特性。来自高分辨率透射电子显微镜的 X 射线衍射图和选区电子衍射证实了具有高结晶度的纯立方方铁锰矿结构。拉曼分析证实了每个样品中的立方形声子模式，并且通过锡掺杂的存在揭示了它们的显着相位。Burstein-Moss 模型很好地解释了所有纳米晶样品的带隙加宽，这是由于掺杂电子填充了强色散导带，并且通过去卷积发射光谱证实了氧空位的减少。