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Theoretical Models of Chemical Bond in Molten Binary Cadmium and Zinc Antimonides in A II B V Semiconductors
Russian Journal of Inorganic Chemistry ( IF 2.1 ) Pub Date : 2020-09-23 , DOI: 10.1134/s0036023620090028
A. A. Ashcheulov , O. N. Manyk , T. O. Manyk , V. R. Bilynskyi-Slotylo , A. D. Izotov , I. V. Fedorchenko

Abstract

A complex approach to the short-range ordering in molten binary cadmium and zinc antimonides has been proposed which considers specific features of the fine structure of chemical bond and interatomic interaction in АIIВV semiconductors. A procedure has been developed and the dissociation energies of nonequivalent chemical bonds in cadmium and zinc antimonides have been calculated as a function of interatomic distances and atomic characteristics of the starting components.



中文翻译:

A II BV半导体中熔融二元镉和锑化锌中化学键的理论模型

摘要

一个复杂的方法来短程有序熔融二进制镉和锌锑已经提出了考虑化学键和原子间相互作用在А精细结构的具体特征II В V半导体。已经开发了一种方法,并且根据原子间距离和起始组分的原子特性,计算了镉和锑化锌中非等价化学键的解离能。

更新日期:2020-09-24
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