Abstract

The results of experimental studies of optimized shock-ionized dynistors (SIDs) when switching high-power current pulses with a nanosecond duration are presented. It is shown that the efficiency of the SID switching process can be increased by introducing uniformly distributed equal-sized diode sections, whose total area is significantly less than the total area of the semiconductor structure of the dynistor, into its four-layer structure. The results of comparative studies of optimized SIDs with different areas of structures and different maximum allowable voltages in the stationary state are presented. Explanations of the results are given.

中文翻译：

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亚纳秒级切换时间的测振器

摘要

给出了当以纳秒级持续时间切换大功率电流脉冲时优化冲击电离测向器（SID）的实验研究结果。结果表明，通过将均匀分布的等尺寸二极管部分引入其四层结构中，可以提高SID切换过程的效率，该二极管部分的总面积明显小于测功二极管的半导体结构的总面积。给出了具有不同结构面积和不同稳态下最大允许电压的优化SID的比较研究结果。给出了结果的解释。