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Dynistors with a Subnanosecond Switching Time

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Abstract

The results of experimental studies of optimized shock-ionized dynistors (SIDs) when switching high-power current pulses with a nanosecond duration are presented. It is shown that the efficiency of the SID switching process can be increased by introducing uniformly distributed equal-sized diode sections, whose total area is significantly less than the total area of the semiconductor structure of the dynistor, into its four-layer structure. The results of comparative studies of optimized SIDs with different areas of structures and different maximum allowable voltages in the stationary state are presented. Explanations of the results are given.

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Correspondence to S. V. Korotkov.

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Translated by A. Seferov

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Korotkov, S.V., Aristov, Y.V., Zhmodikov, A.L. et al. Dynistors with a Subnanosecond Switching Time. Instrum Exp Tech 63, 683–688 (2020). https://doi.org/10.1134/S0020441220050176

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  • DOI: https://doi.org/10.1134/S0020441220050176

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