Abstract

High-voltage fast recovery diodes (FRDs) are characterized by a small forward voltage drop and low power dissipation. The main characteristics of such diodes is the reverse blocking voltage or the breakdown voltage. The aim of this work is to develop a guard ring topology allowing us to obtain the maximum possible blocking voltage of the diode and definite localization of the breakdown place under the conditions of the standard technological processes and without using new materials or substrates. The topology of the high-voltage part of silicon fast recovery power diodes is developed to obtain the maximum reverse blocking voltage. The calculations are carried out in the TCAD environment in the structure editor of which we included a program for the automatic creation of device models with dimensions of about several millimeters. The arrangement of guard rings is calculated according to the proposed principle allowing us to obtain power diodes with different breakdown voltages. The topology is developed so that the breakdown occurs under the edge of the active region, which guarantees the absence of catastrophic failures of the device. Power fast recovery diodes manufactured according to the proposed topology have the maximum reverse blocking voltage within the range of 3.3–6.7 kV, which indicates the reliability of the calculation methodology.

中文翻译：

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开发阻断电压高达6.7 kV的功率硅二极管的保护环拓扑

摘要

高压快速恢复二极管（FRD）的特点是正向压降小，功耗低。这种二极管的主要特性是反向阻断电压或击穿电压。这项工作的目的是开发一种保护环拓扑结构，使我们能够在标准工艺条件下获得二极管的最大可能阻塞电压，并确定击穿位置的局部位置，而无需使用新材料或新衬底。开发硅快速恢复功率二极管的高压部分的拓扑以获得最大的反向阻断电压。计算是在TCAD环境中的结构编辑器中进行的，我们在其中包括了一个用于自动创建尺寸约为几毫米的设备模型的程序。保护环的布置是根据提出的原理计算的，这使我们可以获得具有不同击穿电压的功率二极管。拓扑结构的开发使得击穿发生在有源区域的边缘之下，从而保证了设备不会发生灾难性故障。根据建议的拓扑结构制造的功率快速恢复二极管具有在3.3–6.7 kV范围内的最大反向阻断电压，这表明了计算方法的可靠性。