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Fabrication, carrier transport mechanisms and photovoltaic properties of Au/silicon phthalocyanine dichloride/p-Si/Al heterojunction device
Optical and Quantum Electronics ( IF 3.3 ) Pub Date : 2020-09-21 , DOI: 10.1007/s11082-020-02546-8
D. G. El-Damhogi , H. M. El-Mallah , Mohamed Abd el-Salam , E. Elesh

This research paper aims to study the carrier transport mechanisms and photovoltaic properties of the SiPcCl2 thin film. To achieve this, Au/silicon phthalocyanine dichloride (SiPcCl2)/p-Si/Al heterojunction device was prepared. The heterojunction microelectronic parameters such as ideality factor, m and reverse current Is were estimated at room temperature and found to be 6.77 and 408 nA respectively. The series resistance Rs of the fabricated device was also calculated. Two mechanisms were deduced in SiPcCl2/p-Si according to the voltage range. The results revealed that the height of effective barrier $$\varphi_{bi}$$ is clearly increased from 0.71 to 0.80 eV. Moreover, the photovoltaic properties of Au/SiPcCl2/p-Si/Al cell were studied under illumination such as the short circuit current, Isc, open circuit voltage, Voc, maximum current IM, maximum voltage, VM, filling factor FF and power conversion efficiency, η were measured to be 0.59 mA, 0.47 V, 0.44 mA, and 0.24 V, 0.40 and 3.7% respectively. The topographical properties of the SiPcCl2 thin film deposited on the flat glass substrate were investigated using atomic force microscope method.

中文翻译:

Au/硅酞菁二氯化物/p-Si/Al异质结器件的制备、载流子传输机制和光伏性能

本研究论文旨在研究 SiPcCl2 薄膜的载流子传输机制和光伏特性。为此,制备了 Au/硅酞菁二氯化物 (SiPcCl2)/p-Si/Al 异质结器件。在室温下估计异质结微电子参数,如理想因子、m 和反向电流 Is,分别为 6.77 和 408 nA。还计算了所制造器件的串联电阻 Rs。根据电压范围在 SiPcCl2/p-Si 中推导出两种机制。结果表明,有效势垒 $$\varphi_{bi}$$ 的高度明显从 0.71 增加到 0.80 eV。此外,研究了 Au/SiPcCl2/p-Si/Al 电池在光照条件下的光伏特性,如短路电流、Isc、开路电压、Voc、最大电流 IM、测得的最大电压 VM、填充因子 FF 和功率转换效率 η 分别为 0.59 mA、0.47 V、0.44 mA 和 0.24 V、0.40 和 3.7%。使用原子力显微镜方法研究了沉积在平板玻璃基板上的 SiPcCl2 薄膜的形貌特性。
更新日期:2020-09-21
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