Separation of the solid inclusions formed during the refining process is one of the major challenges associated with metallurgical refining of silicon (Si). Wettability of solid carbon (C), silicon carbide (SiC) and silicon nitride (Si 3 N 4 ) substrates with liquid silicon was examined using sessile drop technique. This study was performed with the aim of finding the appropriate temperature for separating the above inclusions from liquid Si. Silicon of 6 N + purity was melted over each substrate and contact angle was measured in the temperature range of 1420°C to 1525°C in a slightly reducing atmosphere for each system. The contact angle for C-Si is 14° at 1420°C and reaches the value of 11° at 1520°C. In the same temperature range, the contact angle for SiC-Si system decreases from 46° to 37°. The effect of temperature on contact angle is more pronounced for Si 3 N 4 -Si system with a decline from 108° to 68° in the range of 1435–1525°C.

中文翻译：

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碳 (C)、碳化硅 (SiC) 和氮化硅 (Si3N4) 与液态硅 (Si) 的润湿性

在精炼过程中形成的固体夹杂物的分离是与硅 (Si) 冶金精炼相关的主要挑战之一。固体碳 (C)、碳化硅 (SiC) 和氮化硅 (Si 3 N 4 ) 衬底与液体硅的润湿性使用固滴技术进行了检查。进行这项研究的目的是找到将上述夹杂物从液态硅中分离出来的合适温度。6 N + 纯度的硅在每个衬底上熔化，接触角在 1420°C 至 1525°C 的温度范围内在轻微还原气氛中测量每个系统。C-Si 的接触角在 1420°C 时为 14°，在 1520°C 时达到 11°。在相同温度范围内，SiC-Si体系的接触角从46°减小到37°。