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Wettability of Carbon (C), Silicon Carbide (SiC), and Silicon Nitride (Si3N4) with Liquid Silicon (Si)

  • Silicon Production, Refining, Properties, and Photovoltaics
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Abstract

Separation of the solid inclusions formed during the refining process is one of the major challenges associated with metallurgical refining of silicon (Si). Wettability of solid carbon (C), silicon carbide (SiC) and silicon nitride (Si3N4) substrates with liquid silicon was examined using sessile drop technique. This study was performed with the aim of finding the appropriate temperature for separating the above inclusions from liquid Si. Silicon of 6 N + purity was melted over each substrate and contact angle was measured in the temperature range of 1420°C to 1525°C in a slightly reducing atmosphere for each system. The contact angle for C-Si is 14° at 1420°C and reaches the value of 11° at 1520°C. In the same temperature range, the contact angle for SiC-Si system decreases from 46° to 37°. The effect of temperature on contact angle is more pronounced for Si3N4-Si system with a decline from 108° to 68° in the range of 1435–1525°C.

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Authors and Affiliations

  1. Shawcor, Toronto, ON, M9W 1M7, Canada

    Harish Iyer

  2. University of British Columbia, Vancouver, BC, V6T 1Z4, Canada

    Yuchang Xiao & Leili Tafaghodi Khajavi

  3. RBC, Toronto, ON, M5J 1J1, Canada

    Damian Durlik

  4. University of Toronto, Toronto, ON, M5S 1A1, Canada

    Karim Danaei & Mansoor Barati

Authors
  1. Harish Iyer
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  2. Yuchang Xiao
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  3. Damian Durlik
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  4. Karim Danaei
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  5. Leili Tafaghodi Khajavi
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  6. Mansoor Barati
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Correspondence to Yuchang Xiao.

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Iyer, H., Xiao, Y., Durlik, D. et al. Wettability of Carbon (C), Silicon Carbide (SiC), and Silicon Nitride (Si3N4) with Liquid Silicon (Si). JOM 73, 244–252 (2021). https://doi.org/10.1007/s11837-020-04369-0

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  • DOI: https://doi.org/10.1007/s11837-020-04369-0

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