Abstract

Results of investigation of static characteristics of the vertical-cavity surface-emitting lasers (VCSEL) of the 850-nm spectral range based on strained InGaAs/AlGaAs quantum wells in a wide range of current-aperture sizes are presented. The reasons for their anomalous behavior at large design gain-to-cavity wavelength detuning are analyzed. Lateral spreading of carriers in the plane of quantum wells and specific profile of oxide aperture (leading to formation of an effective two-step waveguide) in the studied VCSELs makes possible the existence of higher-order modes localized at the current-aperture periphery. Inhomogeneity of carrier injection across the current aperture in wide-aperture lasers leads to initial onset lasing via the higher-order modes. Subsequent transition to classical lasing via the lower-order modes with increase in current is caused by changes in the gain-to-cavity detuning with increase in internal laser temperature. Anomalous lasing via higher-order modes in the case of narrow-aperture VCSELs becomes possible due to increase in the diffraction losses at the edge of the oxide current aperture for the fundamental mode. In the process, not only a decrease in the gain-to-cavity detuning but also the effect of thermal lens are responsible for subsequent laser hopping to the regime of co-lasing via two modes.

中文翻译：

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大增益腔谐振失谐下具有双氧化物电流孔径的850nm光谱范围的垂直腔表面发射激光器的异常激光发射研究

摘要

提出了基于应变InGaAs / AlGaAs量子阱的850纳米光谱范围的垂直腔表面发射激光器（VCSEL）的静态特性的研究结果，该激光器在很大的电流孔径范围内。分析了在大的设计增益到腔波长失谐情况下它们异常行为的原因。在所研究的VCSEL中，载流子在量子阱平面内的横向扩散以及氧化物孔径的特定分布（导致形成有效的两步波导）使存在于电流孔径外围的高阶模的存在成为可能。在宽孔径激光器中，跨电流孔径的载流子注入的不均匀性会导致通过高阶模式的初始激射。随后随着电流的增加，通过低阶模式转换为经典激光的原因是，随着内部激光器温度的升高，增益到腔失谐的变化。在窄孔VCSEL的情况下，由于基本模式的氧化物电流孔径边缘处的衍射损耗增加，通过高阶模式的异常激光成为可能。在此过程中，不仅增益降低到腔失谐，而且热透镜的作用还导致随后的激光跳变通过两种模式进入共激射状态。在窄孔VCSEL的情况下，由于基本模式的氧化物电流孔径边缘处的衍射损耗增加，通过高阶模式的异常激光成为可能。在此过程中，不仅增益降低到腔失谐，而且热透镜的作用还导致随后的激光跳变通过两种模式进入共激射状态。在窄孔VCSEL的情况下，由于基本模式的氧化物电流孔径边缘处的衍射损耗增加，经由高阶模式的异常激射成为可能。在此过程中，不仅增益降低到腔失谐，而且热透镜的作用还导致随后的激光跳变通过两种模式进入共激射状态。