Abstract Direct bonding of a diamond (100) substrate and a Si wafer was achieved at 250°C under atmospheric conditions. Prior to the bonding process, the diamond substrate was treated with H2SO4/H2O2 and NH3/H2O2 mixtures, whereas the Si wafer was irradiated using oxygen plasma. By applying the pressure during the annealing process, the substrates were entirely bonded, except for the contaminated areas. The bonded specimen was fractured when a shear force of 1.7 MPa was applied. The electron microscopic observation indicated that the diamond and Si substrates were atomically bonded through a 3-nm-thick SiO2 layer without significant loss of diamond crystallinity. The integration of diamond (100) substrates on an Si wafer would contribute to the fabrication of future diamond devices.

中文翻译：

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大气条件下金刚石（100）衬底在硅片上的低温直接键合

摘要 在大气条件下，在 250°C 下实现了金刚石 (100) 衬底和 Si 晶片的直接键合。在键合工艺之前，金刚石基材用 H2SO4/H2O2 和 NH3/H2O2 混合物处理，而 Si 晶片则用氧等离子体照射。通过在退火过程中施加压力，除污染区域外，基板完全粘合。当施加 1.7 MPa 的剪切力时，粘合试样断裂。电子显微镜观察表明，金刚石和硅衬底通过 3 nm 厚的 SiO2 层原子结合，而金刚石结晶度没有显着损失。在硅晶片上集成金刚石 (100) 衬底将有助于制造未来的金刚石器件。