Low-temperature direct bonding of diamond (100) substrate on Si wafer under atmospheric conditions

doi:10.1016/j.scriptamat.2020.09.006

Scripta Materialia

Volume 191, 15 January 2021, Pages 52-55

https://doi.org/10.1016/j.scriptamat.2020.09.006 Get rights and content

Abstract

Direct bonding of a diamond (100) substrate and a Si wafer was achieved at 250°C under atmospheric conditions. Prior to the bonding process, the diamond substrate was treated with H₂SO₄/H₂O₂ and NH₃/H₂O₂ mixtures, whereas the Si wafer was irradiated using oxygen plasma. By applying the pressure during the annealing process, the substrates were entirely bonded, except for the contaminated areas. The bonded specimen was fractured when a shear force of 1.7 MPa was applied. The electron microscopic observation indicated that the diamond and Si substrates were atomically bonded through a 3-nm-thick SiO₂ layer without significant loss of diamond crystallinity. The integration of diamond (100) substrates on an Si wafer would contribute to the fabrication of future diamond devices.

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Declaration of Competing Interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Acknowledgments

This work was supported by JSPS KAKENHI Grant Number 20K15044.

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Low-temperature direct bonding of diamond (100) substrate on Si wafer under atmospheric conditions

Abstract

Graphical abstract

Section snippets

Declaration of Competing Interest

Acknowledgments

Mater. Today

Diam. Relat. Mater.

Diam. Relat. Mater.

Diam. Relat. Mater.

Diam. Relat. Mater.

Scr. Mater.

Surf. Coat. Technol.

Appl. Surf. Sci.

Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. Atoms

Appl. Phys. Express

Appl. Phys. Lett.

Appl. Phys. Lett.