Thin film of oriented crystalline intrinsic polysilicon films were grown on alkali-free borosilicate glass substrate using hot-wire chemical-vapor-deposition (HWCVD) technique. A layer as a source of phosphorus dopant on top of intrinsic polysilicon films were introduced in two different approaches: (i) spinon one-micrometer-thick phosphorus dopant and (ii) phosphorus ion implantation. We investigate the possibility of dopant diffusion, activation, and annealing, using the irradiation of 1064 nm wavelength infrared laser. The annealing is performed under various conditions. The laser power and scan speed are varied to ensure the suitable laser annealing condition. We carry out resistivity measurements to validate the laser annealing process. For structural investigation, we use several characterization techniques, such as scanning electron microscopy, high-resolution X-ray diffraction, photoluminescence spectroscopy, and confocal Raman spectroscopy measurements. We use optical transmission spectra for determining optical characteristics of the film. The electrical measurement shows that the phosphorous-doped n-type polysilicon films are suitable as an emitter layer in photovoltaic device.

使用热线化学气相沉积（HWCVD）技术在无碱硼硅玻璃基板上生长取向晶体本征多晶硅薄膜。通过两种不同的方法在本征多晶硅膜顶部引入了一层作为磷掺杂剂源的层：（i）旋涂一微米厚的磷掺杂剂和（ii）磷离子注入。我们使用1064 nm波长的红外激光辐照，研究了掺杂剂扩散，活化和退火的可能性。退火在各种条件下进行。改变激光功率和扫描速度以确保合适的激光退火条件。我们进行电阻率测量以验证激光退火过程。为了进行结构研究，我们使用了几种表征技术，例如扫描电子显微镜，高分辨率X射线衍射，光致发光光谱和共焦拉曼光谱测量。我们使用光学透射光谱来确定薄膜的光学特性。电学测量表明，掺磷的n型多晶硅膜适合用作光伏器件中的发射极层。