The performance of a group III–V material quantum dot (QD) nanostructure memory is investigated using a self-consistent Schrödinger solver, eight-band k·p model, and carrier dynamics modelling. This model is used to explore the information loss due to the carrier emission rate in the QDs as a function of temperature, size and confinement potential. The results reveal the dominant emission mechanisms that should occur at different operating temperatures. To minimize the loss and improve the performance at room temperature, our findings reveal an increase in the carrier storage time and a reduction in the power dissipation with increasing dot size. It is further illustrated that electrons are advantageous as information carriers over holes and that the inclusion of high-bandgap barrier layers favours longer-duration data retention. The model is extended to include trap states in realistic QDs, whose effect is found to become more prominent with performance optimization. The computed results are in close agreement with other experimental data for different QDs along with barrier layer. This validates the efficacy of the model, which can be utilized as a design tool for fabricating nanoscale memories with better data retention capability.

使用自洽Schrödinger求解器，八波段k · p研究了III–V族材料量子点（QD）纳米结构存储器的性能。模型，以及载具动力学建模。该模型用于研究由于量子点中的载流子发射率而引起的信息损失，这些信息随温度，尺寸和限制电位而变。结果揭示了在不同工作温度下应发生的主要排放机理。为了使损耗最小化并改善室温下的性能，我们的发现揭示了随着点尺寸的增加，载流子存储时间的增加和功耗的减小。进一步说明，电子作为空穴上的信息载体是有利的，并且高带隙势垒层的包含有利于较长时间的数据保留。该模型被扩展为包括现实QD中的陷阱状态，发现其效果随着性能优化而变得更加突出。计算结果与不同QD以及阻隔层的其他实验数据非常吻合。这验证了模型的有效性，该模型可用作制造具有更好数据保留能力的纳米级存储器的设计工具。