We report the experimental and theoretical studies of a magnetic topological nodal line semimetal candidate HoSbTe. Single crystals of HoSbTe are grown from Sb flux, crystallizing in a tetragonal layered structure (space group: $P4/nmm$, no. 129), in which the Ho-Te bilayer is separated by the square-net Sb layer. The magnetization and specific heat present distinct anomalies at ∼4 K related to an antiferromagnetic (AFM) phase transition. Meanwhile, with applying magnetic field perpendicular and parallel to the crystallographic $c$ axis, an obvious magnetic anisotropy is observed. Electrical resistivity undergoes a bad-metal-like state below 200 K and reveals a plateau at about 8 K followed by a drop due to the AFM transition. In addition, with the first-principle calculations of band structure, we find that HoSbTe is a topological nodal line semimetal or a weak topological insulator with or without taking the spin-orbit coupling into account, providing a platform to investigate the interplay between magnetic and topological fermionic properties.

中文翻译：

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拓扑节点线半金属候选物的磁性和电子性质：HoSbTe

我们报告了磁拓扑结线半金属候选HoSbTe的实验和理论研究。HoSbTe的单晶由Sb助熔剂生长而成，并以四方分层结构结晶（空间群：$P4/ñ米米$，不。129），其中Ho-Te双层被方网Sb层隔开。磁化和比热在约4 K处呈现出明显的异常，与反铁磁（AFM）相变有关。同时，施加与晶体学垂直且平行的磁场$C$轴，观察到明显的磁各向异性。电阻率在200 K以下经历类似金属的有害状态，并在约8 K处呈现平稳状态，然后由于AFM跃迁而下降。此外，通过能带结构的第一性原理计算，我们发现HoSbTe是一种拓扑结点线半金属或弱拓扑绝缘体，具有或不具有自旋轨道耦合特性，为研究磁与铁之间的相互作用提供了一个平台。拓扑铁电性质。