Magnetic and electronic properties of a topological nodal line semimetal candidate: HoSbTe

Meng Yang, Yuting Qian, Dayu Yan, Yong Li, Youting Song, Zhijun Wang, Changjiang Yi, Hai L. Feng, Hongming Weng, and Youguo Shi
Phys. Rev. Materials 4, 094203 – Published 14 September 2020

Abstract

We report the experimental and theoretical studies of a magnetic topological nodal line semimetal candidate HoSbTe. Single crystals of HoSbTe are grown from Sb flux, crystallizing in a tetragonal layered structure (space group: P4/nmm, no. 129), in which the Ho-Te bilayer is separated by the square-net Sb layer. The magnetization and specific heat present distinct anomalies at ∼4 K related to an antiferromagnetic (AFM) phase transition. Meanwhile, with applying magnetic field perpendicular and parallel to the crystallographic c axis, an obvious magnetic anisotropy is observed. Electrical resistivity undergoes a bad-metal-like state below 200 K and reveals a plateau at about 8 K followed by a drop due to the AFM transition. In addition, with the first-principle calculations of band structure, we find that HoSbTe is a topological nodal line semimetal or a weak topological insulator with or without taking the spin-orbit coupling into account, providing a platform to investigate the interplay between magnetic and topological fermionic properties.

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  • Received 16 May 2020
  • Accepted 17 August 2020

DOI:https://doi.org/10.1103/PhysRevMaterials.4.094203

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Meng Yang1,2,3,*, Yuting Qian1,3,*, Dayu Yan1,2,3, Yong Li1,2,3, Youting Song1, Zhijun Wang1,3, Changjiang Yi1, Hai L. Feng1, Hongming Weng1,3,4,†, and Youguo Shi1,2,3,‡

  • 1Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
  • 4Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China

  • *These authors contributed equally to this work.
  • hmweng@iphy.ac.cn
  • ygshi@iphy.ac.cn

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Vol. 4, Iss. 9 — September 2020

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