Abstract

The temperature conditions of nucleation of ZnO films on surface-oxidized silicon substrates during magnetron sputtering of a cermet ZnO–Zn target in an Ar atmosphere and chemical vapor deposition in a hydrogen flow upon Zn and H₂O vapor interaction have been investigated. It is shown that the rate of zinc desorption from a growing surface increases significantly and the film growth is suppressed at a substrate temperature above 450°C. It is revealed that two-step deposition with preliminary low-temperature sublayer formation is necessary for ZnO film formation at high temperatures.

中文翻译：

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成核条件对氧化锌薄膜结构的影响

摘要

研究了在Ar气氛中对金属陶瓷ZnO-Zn靶进行磁控溅射以及在Zn和H ₂ O蒸汽相互作用下氢流中化学气相沉积过程中，表面氧化硅衬底上ZnO薄膜成核的温度条件。结果表明，在高于450℃的基板温度下，锌从生长表面的解吸速率显着增加，并且抑制了膜的生长。揭示了具有初步的低温子层形成的两步沉积对于高温下的ZnO膜形成是必要的。