Abstract

Angular dependences of the surface layer composition and the sputtering yield of silicon upon irradiation of the surface with a focused beam of gallium ions with an energy of 30 keV are obtained. The surface composition is analyzed by scanning Auger electron spectroscopy (SAES) and secondary ion mass spectrometry (SIMS). The sputtering yields are determined by measuring the volume of sputtering craters and irradiation doses. It is found that the content of gallium in the surface layer is about 30 at % with incidence angles close to the normal. With incidence angles greater than 30°, the concentration of gallium decreases quite sharply. The angular dependence of the sputtering yield of silicon does not correlate with the content of gallium in the surface layer and is rather well described by the cascade sputtering mechanism proposed by P. Sigmund.

中文翻译：

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镓聚焦离子束溅射硅的角度依赖性

摘要

当以30keV的能量聚焦的镓离子束照射表面时，获得了表面层组成的角度依赖性和硅的溅射产率。通过扫描俄歇电子能谱（SAES）和二次离子质谱（SIMS）分析表面成分。通过测量溅射凹坑的体积和照射剂量来确定溅射产率。发现表面层中的镓含量为约30at％，入射角接近法线。当入射角大于30°时，镓的浓度会急剧下降。硅的溅射产率的角度依赖性与表面层中的镓含量无关，而由P. Sigmund提出的级联溅射机制可以很好地描述。