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Angular Dependences of Silicon Sputtering by Gallium Focused Ion Beam

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Abstract

Angular dependences of the surface layer composition and the sputtering yield of silicon upon irradiation of the surface with a focused beam of gallium ions with an energy of 30 keV are obtained. The surface composition is analyzed by scanning Auger electron spectroscopy (SAES) and secondary ion mass spectrometry (SIMS). The sputtering yields are determined by measuring the volume of sputtering craters and irradiation doses. It is found that the content of gallium in the surface layer is about 30 at % with incidence angles close to the normal. With incidence angles greater than 30°, the concentration of gallium decreases quite sharply. The angular dependence of the sputtering yield of silicon does not correlate with the content of gallium in the surface layer and is rather well described by the cascade sputtering mechanism proposed by P. Sigmund.

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Funding

This study was performed in accordance with a State assignment of the Ministry of Education and Science of the Russian Federation the Valiev Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences, within the framework of topic no. 0066-2019-0003 and using equipment of the Center for Collective Use Diagnostics of Microstructures and Nanostructures.

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Authors and Affiliations

  1. Valiev Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences, 150007, Yaroslavl, Russia

    V. I. Bachurin, I. V. Zhuravlev, D. E. Pukhov, A. S. Rudy, S. G. Simakin, M. A. Smirnova & A. B. Churilov

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  1. V. I. Bachurin
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  2. I. V. Zhuravlev
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  3. D. E. Pukhov
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  4. A. S. Rudy
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  5. S. G. Simakin
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  6. M. A. Smirnova
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  7. A. B. Churilov
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Correspondence to V. I. Bachurin.

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Translated by O. Kadkin

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Bachurin, V.I., Zhuravlev, I.V., Pukhov, D.E. et al. Angular Dependences of Silicon Sputtering by Gallium Focused Ion Beam. J. Surf. Investig. 14, 784–790 (2020). https://doi.org/10.1134/S1027451020040229

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