Abstract

Theoretical explanation of the experimentally discovered effect of a decrease in the excitation energy of surface and volume plasma oscillations of valence Si (111) electrons during the implantation of Ba and alkaline-element ions with a large dose of D > 10¹⁶ cm^–2 is presented in this paper. On the basis of a two-fluid model of the electron gas, the observed effect of a decrease in the Si(111) plasmon energy is explained by the strong damping of valence electron oscillations because of disordering of the Si(111) crystal structure up to full amorphization.

中文翻译：

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大剂量离子注入过程中Si（111）等离子体能量下降影响的理论解释

摘要

对实验发现的大剂量D > 10 ¹⁶ cm ^–2的Ba和碱金属离子注入过程中，价硅（111）电子的表面和体积等离子体振荡的激发能降低的影响的理论解释是在本文中提出。基于电子气的双流体模型，观察到的Si（111）等离子体激元能量降低的影响是由于价电子振荡的强烈阻尼而引起的，这是由于Si（111）晶体结构向上无序所致。完全非晶化。