Abstract
Theoretical explanation of the experimentally discovered effect of a decrease in the excitation energy of surface and volume plasma oscillations of valence Si (111) electrons during the implantation of Ba and alkaline-element ions with a large dose of D > 1016 cm–2 is presented in this paper. On the basis of a two-fluid model of the electron gas, the observed effect of a decrease in the Si(111) plasmon energy is explained by the strong damping of valence electron oscillations because of disordering of the Si(111) crystal structure up to full amorphization.
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The work was supported by the State Grant of Fundamental Studies F-2-31 of the Republic of Uzbekistan.
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Translated by L. Kulman
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Rysbaev, A.S., Khujaniyozov, J.B., Normuradov, M.T. et al. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose. J. Surf. Investig. 14, 816–822 (2020). https://doi.org/10.1134/S102745102004031X
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DOI: https://doi.org/10.1134/S102745102004031X