This paper reports the fabrication of a CuO/CdS heterostructure and the characterization of its properties for optical sensing. Cadmium sulfide (CdS) and cupric oxide (CuO) films were deposited by spray pyrolysis and hydrothermal techniques in order to fabricate CuO/CdS heterojunction devices. The structural, morphological, and optical properties of the CuO and CdS thin films were analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and UV–vis spectroscopy. The concentration of the sulfur precursor, thiourea, was varied over a range from 0.01 to 0.06 M in the spray coating solution for CdS films, and 0.05 M was found to yield improved structural and optical properties. The prepared p-CuO/n-CdS heterojunction exhibited good optical sensing properties with excellent response and recovery speeds. A possible photosensing mechanism for the fabricated heterostructure is detailed using energy band diagrams. In addition, heterojunction properties, including the ideality factor and conduction mechanism are reported: a fabricated heterostructure diode showed a threshold voltage of 0.036 V and an ideality factor of 1.86.

本文报道了CuO / CdS异质结构的制造及其光学传感特性的表征。通过喷雾热解和水热技术沉积硫化镉（CdS）和氧化铜（CuO）膜，以制造CuO / CdS异质结器件。使用X射线衍射（XRD），场发射扫描电子显微镜（FE-SEM）和紫外可见光谱分析了CuO和CdS薄膜的结构，形态和光学性质。在用于CdS膜的喷涂溶液中，硫前体硫脲的浓度在0.01到0.06 M的范围内变化，发现0.05 M可以改善结构和光学性能。制备的p-CuO / n-CdS异质结表现出良好的光学传感性能，具有出色的响应和恢复速度。使用能带图详细说明了制造的异质结构的一种可能的光敏机制。此外，还报告了包括理想因子和导电机理在内的异质结特性：制造的异质结构二极管的阈值电压为0.036 V，理想因子为1.86。