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Control of Superconducting Transitions in Nanowires Using Galvanically Uncoupled Gates for Designing Superconductor-Based Electronic Devices
Physics of the Solid State ( IF 0.6 ) Pub Date : 2020-09-09 , DOI: 10.1134/s1063783420090103 B. A. Gurovich , K. E. Prikhod’ko , L. V. Kutuzov , B. V. Goncharov
中文翻译:
使用电镀非耦合门控制纳米线中的超导转变,以设计基于超导体的电子设备
更新日期:2020-09-09
Physics of the Solid State ( IF 0.6 ) Pub Date : 2020-09-09 , DOI: 10.1134/s1063783420090103 B. A. Gurovich , K. E. Prikhod’ko , L. V. Kutuzov , B. V. Goncharov
Abstract
A possibility of contactless switching of an NbN nanowire from superconducting to normal state by passing a current through a gate located at a certain distance from the nanowire is demonstrated. The gate, being isolated from the nanowire by an Al2O3 layer, contains an integrated resistance formed by ion irradiation. Dependences of the minimum power released in the gate that is sufficient for nanowire to pass to the normal state on the dc current through the nanowire are experimentally obtained. A signal inverter containing three successive cascades is developed based on this principle. This design shows that the proposed approach can be used to form a logic element base for cryogenic computing.中文翻译:
使用电镀非耦合门控制纳米线中的超导转变,以设计基于超导体的电子设备