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Control of Superconducting Transitions in Nanowires Using Galvanically Uncoupled Gates for Designing Superconductor-Based Electronic Devices
Physics of the Solid State ( IF 0.6 ) Pub Date : 2020-09-09 , DOI: 10.1134/s1063783420090103
B. A. Gurovich , K. E. Prikhod’ko , L. V. Kutuzov , B. V. Goncharov

Abstract

A possibility of contactless switching of an NbN nanowire from superconducting to normal state by passing a current through a gate located at a certain distance from the nanowire is demonstrated. The gate, being isolated from the nanowire by an Al2O3 layer, contains an integrated resistance formed by ion irradiation. Dependences of the minimum power released in the gate that is sufficient for nanowire to pass to the normal state on the dc current through the nanowire are experimentally obtained. A signal inverter containing three successive cascades is developed based on this principle. This design shows that the proposed approach can be used to form a logic element base for cryogenic computing.


中文翻译:

使用电镀非耦合门控制纳米线中的超导转变,以设计基于超导体的电子设备

摘要

通过使电流流经距离纳米线一定距离的栅极,NbN纳米线从超导非接触切换到正常状态的可能性得到了证明。通过Al 2 O 3层与纳米线隔离的栅极包含通过离子辐照形成的积分电阻。通过实验获得了在栅极中释放的足以使纳米线传递到正常状态的最小功率对通过纳米线的直流电流的依赖性。基于此原理,开发了包含三个连续级联的信号逆变器。该设计表明,所提出的方法可用于形成用于低温计算的逻辑元件库。
更新日期:2020-09-09
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