Abstract

Data on the synthesis of structures for a quantum cascade terahertz laser in the AlGaAs/GaAs material system on GaAs substrates using the molecular-beam-epitaxy method and their characterization are presented. The specific features necessary for the implementation of such structures are considered. It is shown that, for this configuration, almost single-mode lasing is observed at a frequency of ~3 THz up to a temperature of ~60 K.

中文翻译：

---

太赫兹量子级联激光器的纳米结构的特定生长特征及其物理性质

摘要

给出了利用分子束外延法在GaAs衬底上的AlGaAs / GaAs材料系统中的量子级联太赫兹激光器的结构合成及其表征的数据。考虑了实现此类结构所需的特定功能。据表明，对于这样的结构，激射是在一个频率下观察到几乎单模〜 3THz的高达〜60 K的温度