Abstract
Data on the synthesis of structures for a quantum cascade terahertz laser in the AlGaAs/GaAs material system on GaAs substrates using the molecular-beam-epitaxy method and their characterization are presented. The specific features necessary for the implementation of such structures are considered. It is shown that, for this configuration, almost single-mode lasing is observed at a frequency of ~3 THz up to a temperature of ~60 K.
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Funding
Measurements of the laser structures were performed with the support from the Russian Science Foundation, project no. 18-19-00493.
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Translated by M. Tagirdzhanov
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Cirlin, G.E., Reznik, R.R., Zhukov, A.E. et al. Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties. Semiconductors 54, 1092–1095 (2020). https://doi.org/10.1134/S1063782620090298
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DOI: https://doi.org/10.1134/S1063782620090298