Abstract

It is shown for the first time that Co subnanometer coatings deposited by molecular-beam epitaxy on the (0001) surface of the topological insulator BiSbTeSe₂ at a temperature of 330°C open an energy gap in the spectrum of topological surface states in the region of the Dirac point with a shift of the Dirac-point position caused by the preliminary deposition of an adsorbate at room temperature. The gap width is 21 ± 6 meV. Temperature-dependent measurements in the range of 15–150 K show no changes in the energy-gap width.

中文翻译：

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拓扑绝缘子BiSbTeSe 2（0001）表面沉积钴后，狄拉克点附近的能隙开口

摘要

首次显示在330°C的温度下通过分子束外延在拓扑绝缘体BiSbTeSe ₂的（0001）表面上沉积的Co亚纳米涂层在该区域的拓扑表面态谱中打开了一个能隙狄拉克点的位移随狄拉克点位置的偏移而引起，狄拉克点的位置因室温下吸附物的初步沉积而引起。间隙宽度为21±6 meV。在15–150 K范围内与温度相关的测量结果表明，能隙宽度没有变化。