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Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2

  • XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
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Abstract

It is shown for the first time that Co subnanometer coatings deposited by molecular-beam epitaxy on the (0001) surface of the topological insulator BiSbTeSe2 at a temperature of 330°C open an energy gap in the spectrum of topological surface states in the region of the Dirac point with a shift of the Dirac-point position caused by the preliminary deposition of an adsorbate at room temperature. The gap width is 21 ± 6 meV. Temperature-dependent measurements in the range of 15–150 K show no changes in the energy-gap width.

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Funding

This work was supported by the Russian Foundation for Basic Research, grant no. 17-02-00729.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    A. K. Kaveev, A. G. Banshchikov & A. N. Terpitskiy

  2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    V. A. Golyashov & O. E. Tereshchenko

  3. Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    K. A. Kokh

  4. St.Petersburg State University, 199034, St. Petersburg, Russia

    D. A. Estyunin & A. M. Shikin

Authors
  1. A. K. Kaveev
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  2. A. G. Banshchikov
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  3. A. N. Terpitskiy
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  4. V. A. Golyashov
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  5. O. E. Tereshchenko
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  6. K. A. Kokh
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  7. D. A. Estyunin
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  8. A. M. Shikin
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Correspondence to A. K. Kaveev.

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Translated by V. Bukhanov

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Kaveev, A.K., Banshchikov, A.G., Terpitskiy, A.N. et al. Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2 . Semiconductors 54, 1051–1055 (2020). https://doi.org/10.1134/S1063782620090146

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  • DOI: https://doi.org/10.1134/S1063782620090146

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