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Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region
Semiconductors ( IF 0.6 ) Pub Date : 2020-09-08 , DOI: 10.1134/s1063782620090304 V. V. Utochkin , M. A. Fadeev , S. S. Krishtopenko , V. V. Rumyantsev , V. Ya. Aleshkin , A. A. Dubinov , S. V. Morozov , B. R. Semyagin , M. A. Putyato , E. A. Emelyanov , V. V. Preobrazhenskii , V. I. Gavrilenko
中文翻译：
中红外区InAs / GaInSb / InAs量子阱的光致发光光谱
更新日期：2020-09-08
Semiconductors ( IF 0.6 ) Pub Date : 2020-09-08 , DOI: 10.1134/s1063782620090304 V. V. Utochkin , M. A. Fadeev , S. S. Krishtopenko , V. V. Rumyantsev , V. Ya. Aleshkin , A. A. Dubinov , S. V. Morozov , B. R. Semyagin , M. A. Putyato , E. A. Emelyanov , V. V. Preobrazhenskii , V. I. Gavrilenko
Abstract
The photoluminescence spectra of waveguide AlSb/InAs/GaInSb/InAs/AlSb quantum-well heterostructures designed for the generation of radiation at interband transitions in the mid-infrared region have been studied. The experimentally detected spectral lines are correlated with calculations of the band structure.
中文翻译：
中红外区InAs / GaInSb / InAs量子阱的光致发光光谱
摘要
研究了波导AlSb / InAs / GaInSb / InAs / AlSb量子阱异质结构的光致发光光谱，该结构设计用于在中红外区域的带间跃迁处产生辐射。实验检测到的谱线与能带结构的计算相关。
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