Abstract
The photoluminescence spectra of waveguide AlSb/InAs/GaInSb/InAs/AlSb quantum-well heterostructures designed for the generation of radiation at interband transitions in the mid-infrared region have been studied. The experimentally detected spectral lines are correlated with calculations of the band structure.
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Funding
The study was implemented in accordance with government order no. 0035-2019-0020 for the Institute for Physics of Microstructures, Russian Academy of Sciences, and supported by the Russian Foundation for Basic Research, project no. 18-42-520040_povolzh’e).
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Translated by E. Smorgonskaya
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Utochkin, V.V., Fadeev, M.A., Krishtopenko, S.S. et al. Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region. Semiconductors 54, 1119–1122 (2020). https://doi.org/10.1134/S1063782620090304
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DOI: https://doi.org/10.1134/S1063782620090304