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A Study of the Photoresponse in Graphene Produced by Chemical Vapor Deposition
Semiconductors ( IF 0.6 ) Pub Date : 2020-09-08 , DOI: 10.1134/s1063782620090031
A. V. Babichev , S. A. Kadinskaya , K. Yu. Shubina , A. A. Vasiliev , A. A. Blokhin , E. I. Moiseev , S. A. Blokhin , I. S. Mukhin , I. A. Eliseyev , V. Yu. Davydov , P. N. Brunkov , N. V. Kryzhanovskaya , A. Yu. Egorov

Abstract

The results of experiments aimed at fabricating and studying the properties of photodetector structures based on single-layer graphene produced by chemical vapor deposition are presented. The configuration of a Ta2O5 vertical microcavity with a resonance wavelength of about 850 nm and a lower dielectric SiO2/Ta2O5 distributed Bragg reflector is taken as the base structure. The conditions for the transfer and fabrication of mesas in the graphene layer on the microcavity surface are optimized. The diagnostics by Raman spectroscopy of the structural quality of graphene after fabrication of the mesas in the graphene layer and contact pads are indicative of the single-layer structure of graphene with a low intensity of features in its spectrum, responsible for imperfection of the structure. The photocurrent is measured under local optical pumping.



中文翻译:

化学气相沉积法制备石墨烯中光响应的研究

摘要

提出了旨在制造和研究基于化学气相沉积产生的单层石墨烯的光电探测器结构特性的实验结果。Ta 2 O 5垂直微腔的结构,共振波长约为850 nm,介电常数SiO 2 / Ta 2 O 5较低分布式布拉格反射器为基础结构。优化了微腔表面上石墨烯层中台面的转移和制造条件。在石墨烯层和接触垫中的台面制造之后,通过拉曼光谱法对石墨烯的结构质量的诊断表明,石墨烯的单层结构在其光谱中具有低强度的特征,这是结构缺陷的原因。在局部光泵浦下测量光电流。

更新日期:2020-09-08
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