Abstract

We interpret the recent observations of Otsuji’s team (Sendai) on switching from absorption to amplification at a temperature of T = 300 K during the passage of terahertz radiation through hexagonal boron nitride–graphene sandwiches with multiple gates on the surface with an increase in the electric field in graphene. It is shown that these effects are related to dispersion and negative conductivity near the transit-time frequency of electrons in momentum space under streaming (anisotropic distribution) in graphene in a strong electric field. On the basis of these data, a universal tunable terahertz source is proposed, which has the form of a graphene-containing sandwich with a high-resistance silicon wafer (a cavity) with an applied voltage. This terahertz cavity is a complete analog of the microwave generator implemented on an InP chip by Vorobev’s team (St. Petersburg).

中文翻译：

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在300 K石墨烯中电子流下的太赫兹色散和放大

摘要

我们解释了Otsuji团队（仙台）在温度为T时从吸收转换为放大的最新观察结果在太赫兹辐射通过六角形氮化硼-石墨烯夹心的过程中= 300 K，该夹心在表面上具有多个栅极，并且石墨烯中的电场增加。结果表明，这些效应与石墨烯在强电场中的流（各向异性分布）下动量空间中电子的穿越时间频率附近的色散和负电导率有关。根据这些数据，提出了一种通用的可调谐太赫兹源，其形式为含石墨烯的夹心结构，带有施加电压的高电阻硅晶片（空腔）。太赫兹腔是由Vorobev的团队（圣彼得堡）在InP芯片上实现的微波发生器的完整模拟。