Failures of MEMS devices under shock are due to the overlap of the static and moving parts. The shock response of the microstructure under mechanical shock is investigated in this paper. This work presents modelling and simulation of the microstructures such as microcantilever, fixed–fixed flexure and serpentine structure and is further extended to optimize the response of high-g acceleration threshold switch under mechanical shock. The latching threshold for the high-g acceleration switch is estimated using the geometrical structure. The natural frequency of the serpentine spring-mass structure is selected to achieve the required displacement for latching. The dimensions of the switch are optimized in accordance with the natural frequency and to meet the requirement of latching for a given shock. The switch is fabricated on silicon on insulator wafer with a deep reactive ion etching process. The switch is tested on the static mechanical shock of 3500 g and shows a good agreement between analytical, numerical and experimental results.

MEMS器件遭受冲击的故障是由于静态部分和运动部分的重叠造成的。本文研究了机械冲击作用下显微组织的冲击响应。这项工作提出了微观结构的建模和仿真，例如微悬臂梁，固定弯曲结构和蛇形结构，并进一步扩展以优化机械冲击下高g加速度阈值开关的响应。使用几何结构估算高g加速度开关的闩锁阈值。选择蛇形弹簧质量结构的固有频率以实现闩锁所需的位移。开关的尺寸根据固有频率进行了优化，以满足给定冲击的闩锁要求。该开关通过深反应离子蚀刻工艺在绝缘体上的硅上制造。该开关经过3500 g的静态机械冲击测试，在分析，数值和实验结果之间显示出良好的一致性。