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Self-polarization of a donor impurity for the first excited state in an Ga 1-x Al x As/GaAs quantum well
Indian Journal of Physics ( IF 1.6 ) Pub Date : 2020-09-07 , DOI: 10.1007/s12648-020-01829-w
S. Sucu , S. Minez , I. Erdogan

In this study, self-polarization (SP) for the first excited state in the finite quantum well is presented by taking into account the hydrostatic pressure and the external electric field. We calculated the SP of the first excited state by using the variational method under the effective mass approximation. These calculations were made for different values of the quantum well-width, hydrostatic pressure, external electric field and impurity positions. Our results indicate that the self-polarization of the first excited state in finite quantum well depends remarkably on the hydrostatic pressure, external electric field strength and impurity position.



中文翻译:

Ga 1-x Al x As / GaAs量子阱中用于第一激发态的施主杂质的自极化

在这项研究中,通过考虑静水压力和外部电场,给出了有限量子阱中第一激发态的自极化(SP)。在有效质量近似下,我们使用变分法计算了第一激发态的SP。这些计算是针对量子阱宽度,静水压力,外部电场和杂质位置的不同值进行的。我们的结果表明,有限量子阱中第一激发态的自极化显着取决于静水压力,外部电场强度和杂质位置。

更新日期:2020-09-08
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