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Self-polarization of a donor impurity for the first excited state in an Ga1-xAlxAs/GaAs quantum well

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Abstract

In this study, self-polarization (SP) for the first excited state in the finite quantum well is presented by taking into account the hydrostatic pressure and the external electric field. We calculated the SP of the first excited state by using the variational method under the effective mass approximation. These calculations were made for different values of the quantum well-width, hydrostatic pressure, external electric field and impurity positions. Our results indicate that the self-polarization of the first excited state in finite quantum well depends remarkably on the hydrostatic pressure, external electric field strength and impurity position.

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Authors and Affiliations

  1. Department of Physics, Trakya University, 22030, Edirne, Turkey

    S. Sucu, S. Minez & I. Erdogan

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  1. S. Sucu
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  2. S. Minez
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  3. I. Erdogan
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Correspondence to S. Sucu.

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Sucu, S., Minez, S. & Erdogan, I. Self-polarization of a donor impurity for the first excited state in an Ga1-xAlxAs/GaAs quantum well. Indian J Phys 95, 1691–1695 (2021). https://doi.org/10.1007/s12648-020-01829-w

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