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Similarity in the Kinetics and Mechanisms of Galvanostatic Anodic Oxidation of Silicon, Silicon Carbide, and Nitride
Surface Engineering and Applied Electrochemistry ( IF 1.1 ) Pub Date : 2020-09-02 , DOI: 10.3103/s1068375520040109 L. P. Mileshko
中文翻译:
硅,碳化硅和氮化物的恒电流阳极氧化的动力学和机理的相似性
更新日期:2020-09-02
Surface Engineering and Applied Electrochemistry ( IF 1.1 ) Pub Date : 2020-09-02 , DOI: 10.3103/s1068375520040109 L. P. Mileshko
Abstract
It is shown that the formation of anodic oxides in the galvanostatic mode of electrolytic anodizing of Si, SiC, and Si3N4 proceeds with the activation control of the process. It is suggested that the limiting stage of the oxidation process of these materials is the anodic reaction of the formation of intermediate monoxide SiO.中文翻译:
硅,碳化硅和氮化物的恒电流阳极氧化的动力学和机理的相似性