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Similarity in the Kinetics and Mechanisms of Galvanostatic Anodic Oxidation of Silicon, Silicon Carbide, and Nitride
Surface Engineering and Applied Electrochemistry Pub Date : 2020-09-02 , DOI: 10.3103/s1068375520040109
L. P. Mileshko

Abstract

It is shown that the formation of anodic oxides in the galvanostatic mode of electrolytic anodizing of Si, SiC, and Si3N4 proceeds with the activation control of the process. It is suggested that the limiting stage of the oxidation process of these materials is the anodic reaction of the formation of intermediate monoxide SiO.


中文翻译:

硅,碳化硅和氮化物的恒电流阳极氧化的动力学和机理的相似性

摘要

结果表明,在对Si,SiC和Si 3 N 4进行电解阳极氧化的恒电流模式下,阳极氧化物的形成随过程的活化控制而进行。建议这些材料氧化过程的极限阶段是形成中间一氧化硅SiO的阳极反应。
更新日期:2020-09-02
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