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Similarity in the Kinetics and Mechanisms of Galvanostatic Anodic Oxidation of Silicon, Silicon Carbide, and Nitride

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Abstract

It is shown that the formation of anodic oxides in the galvanostatic mode of electrolytic anodizing of Si, SiC, and Si3N4 proceeds with the activation control of the process. It is suggested that the limiting stage of the oxidation process of these materials is the anodic reaction of the formation of intermediate monoxide SiO.

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ACKNOWLEDGMENTS

I am grateful to the reviewer for helpful comments that allowed for improving the work’s quality.

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  1. Southern Federal University, 344006, Rostov-on-Don, Russia

    L. P. Mileshko

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  1. L. P. Mileshko
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Correspondence to L. P. Mileshko.

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Translated by M. Myshkina

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Mileshko, L.P. Similarity in the Kinetics and Mechanisms of Galvanostatic Anodic Oxidation of Silicon, Silicon Carbide, and Nitride. Surf. Engin. Appl.Electrochem. 56, 453–456 (2020). https://doi.org/10.3103/S1068375520040109

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  • DOI: https://doi.org/10.3103/S1068375520040109

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